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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2625
DESCRIPTION With TO-3PN package High voltage,high speed switching High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings (Tc=25ae )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg

PARAMETER
Fig.1 simplified outline (TO-3PN) and symbol
INC
Collector-base voltage
Collector-emitter voltage
ANG H
E SEM
Open base
OND IC
CONDITIONS
TOR UC
VALUE 450 400 7 10 3
UNIT V V V A A W ae ae
Open emitter
Emitter-base voltage
Open collector
Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25ae
80 150 -55~150
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.55 UNIT ae /W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Emitter-base saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ;IB=0 IC=1A ;IB=0 IC=1mA ;IE=0 IE=0.1mA ;IC=0 IC=4A; IB=0.8A IC=4A ;IB=0.8A VCB=450V IE=0 VEB=7V; IC=0 IC=4A ; VCE=5V MIN 400 400 450 7
2SC2625
SYMBOL V(BR)CEO VCEO(SUS) V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE
TYP.
MAX
UNIT V V V V
1.2 1.5 1.0
V V mA mA
Switching times ton ts tf
IN
Fall time

Turn-on time Storage time
CHA
E SEM NG
OND IC
10
TOR UC
1.0 2.0 1.0 |I |I |I
0.1
s s s
IC=7.5A; IB1=-IB2=1.5A RL=20| ,Pw=20|I s DutyU 2%
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2625

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2625

CHA IN
E SEM NG
OND IC
TOR UC
4


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